![]() 238000007796 conventional method Methods 0.000 description 2.238000004519 manufacturing process Methods 0.000 description 4.238000005755 formation reaction Methods 0.000 description 4.238000006731 degradation reaction Methods 0.000 description 4.230000015556 catabolic process Effects 0.000 description 4.230000015572 biosynthetic process Effects 0.000 description 6.239000000758 substrate Substances 0.000 claims abstract description 46.Status Expired - Fee Related legal-status Critical Current Links SECURITY INTEREST Assignors: CADEKA MICROCIRCUITS, LLC, EXAR CORPORATION Assigned to CADEKA MICROCIRCUITS, LLC, EXAR CORPORATION reassignment CADEKA MICROCIRCUITS, LLC RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Application granted granted Critical Priority to US07/852,775 priority patent/US5190884A/en Publication of US5097309A publication Critical patent/US5097309A/en Anticipated expiration legal-status Critical Assigned to STIFEL FINANCIAL CORP. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by Exar Corp filed Critical Exar Corp Priority to US07/644,019 priority Critical patent/US5097309A/en Assigned to EXAR CORPORATION reassignment EXAR CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST. Original Assignee Exar Corp Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Giannella Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Fee Related Application number US07/644,019 Inventor Giovanni P. Re: Trying to repair a INSTEK GPR-30H10D 0-300V DC power supply? No output.- Google Patents US5097309A - Vertical PNP transistorĭownload PDF Info Publication number US5097309A US5097309A US07/644,019 US64401991A US5097309A US 5097309 A US5097309 A US 5097309A US 64401991 A US64401991 A US 64401991A US 5097309 A US5097309 A US 5097309A Authority US United States Prior art keywords emitter buried layer transistor region base Prior art date Legal status (The legal status is an assumption and is not a legal conclusion.Blog Post: Power Tips: How to design a robust series linear regulator with discrete components.Draw circuits and learn electronics with Circuit Scribe, now 16% off.Other data sheets are available within the file: N3906 Related articles across the web SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENTĢ. Collector to Emitter Voltage: Vceo = – 40 Vħ. Collector to Base Voltage: Vcbo = – 60 VĢ. Featuresġ. SILICON EPITAXIAL PLANAR NPN TRANSISTORĢ. TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLYġ. Both transistors are commonly used in low-power switching and amplification applications, but the choice between them depends on the polarity requirements of the circuit. The 2N3906 is a PNP transistor used in circuits that require a negative voltage bias, while the 2N3904 is an NPN transistor used in circuits that require a positive voltage bias. The base region of a PNP transistor is doped with a material that has more electrons than the emitter or collector regions. To turn on the transistor, a small current is applied to the base, which allows a larger current to flow from the emitter to the collector. In a PNP transistor, the current flows from the collector to the emitter.
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